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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RCJ510N25TLMOSFET N-CH 250V 51A LPTS Rohm Semiconductor |
4,965 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 51A (Tc) | 10V | 65mOhm @ 25.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 7000 pF @ 25 V | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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RJ1P12BBDTLLMOSFET N-CH 100V 120A LPTL Rohm Semiconductor |
848 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 5.8mOhm @ 50A, 10V | 4V @ 2.5mA | 80 nC @ 10 V | ±20V | 4170 pF @ 50 V | - | 178W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTL |
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R6520ENXC7G650V 20A TO-220FM, LOW-NOISE POW Rohm Semiconductor |
958 | - |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 4V @ 630µA | 61 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 68W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6055VNZ4C13600V 55A TO-247, PRESTOMOS WITH Rohm Semiconductor |
586 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 55A (Tc) | 10V, 15V | 71mOhm @ 16A, 15V | 6.5V @ 1.5mA | 80 nC @ 10 V | ±30V | 3700 pF @ 100 V | - | 543W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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SCT3120ALHRC11SICFET N-CH 650V 21A TO247N Rohm Semiconductor |
2,204 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | 18V | 156mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38 nC @ 18 V | +22V, -4V | 460 pF @ 500 V | - | 103W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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R6070JNZ4C13600V 70A TO-247, PRESTOMOS WITH Rohm Semiconductor |
550 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 15V | 58mOhm @ 35A, 15V | 7V @ 3mA | 165 nC @ 15 V | ±30V | 6000 pF @ 100 V | - | 770W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
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SCT2280KEGC111200V, 14A, THD, SILICON-CARBIDE Rohm Semiconductor |
1,664 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 14A (Tc) | 18V | 364mOhm @ 4A, 18V | 4V @ 1.4mA | 36 nC @ 18 V | +22V, -6V | 667 pF @ 800 V | - | 108W (Tc) | 175°C | - | - | Through Hole | TO-247N |
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SCT3120AW7TLSICFET N-CH 650V 21A TO263-7 Rohm Semiconductor |
788 | - |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | - | 156mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38 nC @ 18 V | +22V, -4V | 460 pF @ 500 V | - | 100W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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SCT3160KLHRC11SICFET N-CH 1200V 17A TO247N Rohm Semiconductor |
592 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | 103W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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SCT2450KEHRC111200V, 10A, THD, SILICON-CARBIDE Rohm Semiconductor |
427 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 18V | 585mOhm @ 3A, 18V | 4V @ 900µA | 27 nC @ 18 V | +22V, -6V | 463 pF @ 800 V | - | 85W (Tc) | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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