Hello! now
+8618924632110（Bella)
+8618924632110（Bella)
My Account
FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GA10JT12-263TRANS SJT 1200V 25A GeneSiC Semiconductor |
0 | - |
|
Datasheet |
- | - | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 120mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | - | - | Surface Mount | - |
|
GA10JT12-247TRANS SJT 1200V 10A TO247AB GeneSiC Semiconductor |
0 | - |
|
Datasheet |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 10A (Tc) | - | 140mOhm @ 10A | - | - | - | - | - | 170W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
G3R30MT12JSIC MOSFET N-CH 96A TO263-7 GeneSiC Semiconductor |
0 | - |
|
Datasheet |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 96A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 459W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
GA04JT17-247TRANS SJT 1700V 4A TO247AB GeneSiC Semiconductor |
0 | - |
|
- |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 4A (Tc) (95°C) | - | 480mOhm @ 4A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
|
GA20JT12-247TRANS SJT 1200V 20A TO247AB GeneSiC Semiconductor |
0 | - |
|
Datasheet |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 20A (Tc) | - | 70mOhm @ 20A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
|
GA20JT12-263TRANS SJT 1200V 45A D2PAK GeneSiC Semiconductor |
0 | - |
|
Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
GA10SICP12-263TRANS SJT 1200V 25A D2PAK GeneSiC Semiconductor |
0 | - |
|
Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
GA20SICP12-247TRANS SJT 1200V 45A TO247AB GeneSiC Semiconductor |
0 | - |
|
Datasheet |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 50mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
|
GA08JT17-247TRANS SJT 1700V 8A TO247AB GeneSiC Semiconductor |
0 | - |
|
- |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 8A (Tc) (90°C) | - | 250mOhm @ 8A | - | - | - | - | - | 48W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
GA05JT01-46TRANS SJT 100V 9A TO46 GeneSiC Semiconductor |
0 | - |
|
Datasheet |
- | TO-46-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 100 V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | - | - | Through Hole | TO-46 |
- Fast Shipping Fast and convenient door to door delivery.
- Paypment Security More than 5 different secure payment methods.
- Strictly Quality Control 365 days After-Sales Service and Warranty
- Simple And Professional One-stop Electronics Procurement Solutions.
