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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G3F45MT06L-TR650V 40M TO-LL G3F SIC MOSFET GeneSiC Semiconductor |
0 | - |
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- |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 61A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
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G3F33MT06L-TR650V 27M TO-LL G3F SIC MOSFET GeneSiC Semiconductor |
0 | - |
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- |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 90A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | 4.3V @ 12mA | 81 nC @ 18 V | +22V, -10V | 2394 pF @ 400 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
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G3F25MT06L-TR650V 20M TO-LL G3F SIC MOSFET GeneSiC Semiconductor |
0 | - |
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- |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 125A (Tc) | 15V, 18V | 27.5mOhm @ 35A, 18V | 4.3V @ 15mA | 108 nC @ 18 V | +22V, -10V | 2939 pF @ 400 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
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G3R350MT12JSIC MOSFET N-CH 11A TO263-7 GeneSiC Semiconductor |
0 | - |
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Datasheet |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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GA03JT12-247TRANS SJT 1200V 3A TO247AB GeneSiC Semiconductor |
0 | - |
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- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 3A (Tc) (95°C) | - | 460mOhm @ 3A | - | - | - | - | - | 15W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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GA05JT12-263TRANS SJT 1200V 15A D2PAK GeneSiC Semiconductor |
0 | - |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 15A (Tc) | - | - | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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GA05JT12-247TRANS SJT 1200V 5A TO247AB GeneSiC Semiconductor |
0 | - |
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- |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 5A (Tc) | - | 280mOhm @ 5A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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GA06JT12-247TRANS SJT 1200V 6A TO247AB GeneSiC Semiconductor |
0 | - |
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Datasheet |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 6A (Tc) (90°C) | - | 220mOhm @ 6A | - | - | - | - | - | - | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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G3R160MT17JSIC MOSFET N-CH 18A TO263-7 GeneSiC Semiconductor |
0 | - |
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Datasheet |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 18A (Tc) | 15V | 224mOhm @ 10A, 15V | 2.7V @ 5mA | 29 nC @ 15 V | ±15V | 854 pF @ 1000 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G3R75MT12JSIC MOSFET N-CH 42A TO263-7 GeneSiC Semiconductor |
2 | - |
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Datasheet |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 42A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 224W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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