Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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APT10SCD65KDIODE SIL CARB 650V 17A TO220 Microsemi Corporation |
0 |
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- |
- | TO-220-2 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 17A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 150°C |
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APT20SCD65KDIODE SIL CARB 650V 32A TO220 Microsemi Corporation |
0 |
|
- |
- | TO-220-2 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 32A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 650 V | 680pF @ 100mV, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 150°C |
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MC5616DIODE GP 3KV 570MA S AXIAL Microsemi Corporation |
0 |
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![]() Datasheet |
- | S, Axial | Bulk | Active | Standard | 3000 V | 570mA | 6 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 1 µA @ 3000 V | - | - | - | Through Hole | S, Axial | -65°C ~ 150°C |
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APT30SCD65BDIODE SIL CARBIDE 650V 46A TO247 Microsemi Corporation |
0 |
|
- |
- | TO-247-2 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 46A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 650 V | 945pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 150°C |
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JANHCA1N6391SCHOTTKY RECTIFIER Microsemi Corporation |
0 |
|
- |
- | DO-203AA, DO-4, Stud | Bulk | Active | Schottky | 45 V | 22.5A | 680 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 45 V | 2000pF @ 5V, 1MHz | Military | MIL-PRF-19500/553 | Stud Mount | DO-203AA (DO-4) | -55°C ~ 175°C |
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JANHCA1N6392SCHOTTKY RECTIFIER Microsemi Corporation |
0 |
|
- |
- | DO-203AB, DO-5, Stud | Bulk | Active | Schottky | 45 V | 54A | 820 mV @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 45 V | 3000pF @ 5V, 1MHz | Military | MIL-PRF-19500/554 | Stud Mount | DO-5 (DO-203AB) | -55°C ~ 175°C |
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MSC750SMA120SMOSFET N-CH 1200V D3PAK Microsemi Corporation |
0 |
|
- |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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APT10SCE120BDIODE SIL CARB 1.2KV 43A TO247 Microsemi Corporation |
0 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 43A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 630pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
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APT10SCE170BDIODE SIL CARB 1.7KV 23A TO247 Microsemi Corporation |
0 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1700 V | 23A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | 1120pF @ 0V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
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APT10SCE65BDIODE SCHOTTKY 650V 10A TO247 Microsemi Corporation |
0 |
|
- |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |