Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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SCS212AGCDIODE SIL CARB 650V 12A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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SCS208AGHRCDIODE SIL CARB 650V 8A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 291pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
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SCS108AGCDIODE SIL CARB 600V 8A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 345pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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RBLQ20NL10STLTRENCH MOS STRUCTURE, 100V, 20A, Rohm Semiconductor |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 20A | 860 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 100 V | - | - | - | Surface Mount | TO-263L | 150°C |
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SCS215AGCDIODE SIC 650V 15A TO220ACFP Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C (Max) |
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RBLQ30NL10STLTRENCH MOS STRUCTURE, 100V, 30A, Rohm Semiconductor |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 30A | 860 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 100 V | - | - | - | Surface Mount | TO-263L | 150°C |
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SCS205KGHRCDIODE SIL CARB 1.2KV 5A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 270pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
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SCS110AGCDIODE SIL CARB 600V 10A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 430pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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SCS315AMCDIODE SIL CARB 650V 15A TO220FM Rohm Semiconductor |
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- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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RFUS20NS6STLDIODE GEN PURP 600V 20A LPDS Rohm Semiconductor |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 20A | 2.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | - | - | Surface Mount | LPDS | 150°C (Max) |