Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BAS5202VH6433XTMA1DIODE SCHOTTKY 45V 750MA SC79-2 Infineon Technologies |
9,138 |
|
![]() Datasheet |
- | SC-79, SOD-523 | Tape & Reel (TR) | Active | Schottky | 45 V | 750mA | 600 mV @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 45 V | 10pF @ 10V, 1MHz | - | - | Surface Mount | PG-SC79-2 | 150°C (Max) |
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IDV15E65D2XKSA1DIODE GEN PURP 650V 15A TO220-2 Infineon Technologies |
457 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Standard | 650 V | 15A | 2.2 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 47 ns | 40 µA @ 650 V | - | - | - | Through Hole | TO-220-2 | -40°C ~ 175°C |
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IDV20E65D1XKSA1DIODE GP 650V 28A TO220-2FP Infineon Technologies |
483 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 650 V | 28A | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO220-2 Full Pack | -40°C ~ 175°C |
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IDP30E65D2XKSA1DIODE GP 650V 60A TO220-2-1 Infineon Technologies |
534 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Standard | 650 V | 60A | 2.2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO220-2-1 | -40°C ~ 175°C |
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IDP15E65D2XKSA1DIODE GEN PURP 650V 15A TO220 Infineon Technologies |
147 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Standard | 650 V | 15A | 2.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 47 ns | 40 µA @ 650 V | - | - | - | Through Hole | TO-220 | -40°C ~ 175°C |
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IDP30E65D1XKSA1DIODE GP 650V 60A TO220-2-1 Infineon Technologies |
645 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Standard | 650 V | 60A | 1.7 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 64 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO220-2-1 | -40°C ~ 175°C |
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IDV30E65D2XKSA1DIODE GP 650V 30A TO220-2FP Infineon Technologies |
508 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 650 V | 30A | 2.2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO220-2 Full Pack | -40°C ~ 175°C |
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IDP40E65D2XKSA1DIODE GEN PURP 650V 40A TO220-2 Infineon Technologies |
263 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Standard | 650 V | 40A | 2.3 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 40 µA @ 650 V | - | - | - | Through Hole | TO-220-2 | -40°C ~ 175°C |
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IDH02G120C5XKSA1DIODE SIL CARB 1.2KV 2A TO220-1 Infineon Technologies |
1,781 |
|
![]() Datasheet |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 2A | 1.65 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 182pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | 175°C (Max) |
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IDW30E65D1FKSA1DIODE GP 650V 60A TO247-3-1 Infineon Technologies |
259 |
|
![]() Datasheet |
- | TO-247-3 | Tube | Active | Standard | 650 V | 60A | 1.7 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO247-3-1 | -40°C ~ 175°C |