Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Power - Max | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Reverse Recovery Time (trr) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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APT100GN60LDQ4GIGBT TRENCH FS 600V 229A TO264 Microchip Technology |
0 |
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- | TO-264-3, TO-264AA | Tube | Active | Trench Field Stop | 600 V | 229 A | 300 A | 1.85V @ 15V, 100A | 625 W | 4.75mJ (on), 2.675mJ (off) | Standard | 600 nC | 31ns/310ns | 400V, 100A, 1Ohm, 15V | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT50GF120LRGIGBT NPT 1200V 135A TO264 Microchip Technology |
0 |
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- | TO-264-3, TO-264AA | Tube | Active | NPT | 1200 V | 135 A | 150 A | 3V @ 15V, 50A | 781 W | 3.6mJ (on), 2.64mJ (off) | Standard | 340 nC | 25ns/260ns | 800V, 50A, 1Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT68GA60BIGBT PT 600V 121A TO247 Microchip Technology |
1 |
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POWER MOS 8™ | TO-247-3 | Tube | Active | PT | 600 V | 121 A | 202 A | 2.5V @ 15V, 40A | 520 W | 715µJ (on), 607µJ (off) | Standard | 298 nC | 21ns/133ns | 400V, 40A, 4.7Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT35GN120SGIGBT NPT FS 1200V 94A D3PAK Microchip Technology |
23 |
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- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | NPT, Trench Field Stop | 1200 V | 94 A | 105 A | 2.1V @ 15V, 35A | 379 W | -, 2.315mJ (off) | Standard | 220 nC | 24ns/300ns | 800V, 35A, 2.2Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT80GA60BIGBT PT 600V 143A TO247 Microchip Technology |
0 |
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- | TO-247-3 | Tube | Active | PT | 600 V | 143 A | 240 A | 2.5V @ 15V, 47A | 625 W | 840µJ (on), 751µJ (off) | Standard | 230 nC | 23ns/158ns | 400V, 47A, 4.7Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT50GN120B2GIGBT NPT FIELD STOP 1200V 134A Microchip Technology |
0 |
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- | TO-247-3 Variant | Tube | Active | NPT, Trench Field Stop | 1200 V | 134 A | 150 A | 2.1V @ 15V, 50A | 543 W | 4495µJ (off) | Standard | 315 nC | 28ns/320ns | 800V, 50A, 2.2Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | - |
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APT64GA90B2D30IGBT PT 900V 117A TO247 Microchip Technology |
2 |
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POWER MOS 8™ | TO-247-3 Variant | Tube | Active | PT | 900 V | 117 A | 193 A | 3.1V @ 15V, 38A | 500 W | 1192µJ (on), 1088µJ (off) | Standard | 162 nC | 18ns/131ns | 600V, 38A, 4.7Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | - |
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APT33GF120B2RDQ2GIGBT NPT 1200V 64A Microchip Technology |
2 |
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- | TO-247-3 Variant | Tube | Active | NPT | 1200 V | 64 A | 75 A | 3V @ 15V, 25A | 357 W | 1.315mJ (on), 1.515mJ (off) | Standard | 170 nC | 14ns/185ns | 800V, 25A, 4.3Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | - |
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APT25GP90BDQ1GIGBT PT 900V 72A TO247 Microchip Technology |
0 |
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POWER MOS 7® | TO-247-3 | Tube | Active | PT | 900 V | 72 A | 110 A | 3.9V @ 15V, 25A | 417 W | 370µJ (off) | Standard | 110 nC | 13ns/55ns | 600V, 40A, 4.3Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT40GP90BGIGBT PT 900V 100A TO247 Microchip Technology |
0 |
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POWER MOS 7® | TO-247-3 | Tube | Active | PT | 900 V | 100 A | 160 A | 3.9V @ 15V, 40A | 543 W | 825µJ (off) | Standard | 145 nC | 16ns/75ns | 600V, 40A, 5Ohm, 15V | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |