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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FBG04N30BCGAN FET HEMT 40V30A COTS 4FSMD-B EPC Space, LLC |
141 | - |
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Datasheet |
FSMD-B | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 30A (Tc) | 5V | 9mOhm @ 30A, 5V | 2.5V @ 9mA | 11.4 nC @ 5 V | +6V, -4V | 1300 pF @ 20 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
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EPC7003ACGAN FET HEMT 100V 5A COTS 4UB EPC Space, LLC |
138 | - |
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Datasheet |
- | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 10A (Tc) | 10V | 42mOhm @ 10A, 5V | 2.5V @ 1.4mA | 1.5 nC @ 5 V | +6V, -4V | 168 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
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FBG30N04CCGAN FET HEMT 300V4A COTS 4FSMD-C EPC Space, LLC |
165 | - |
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Datasheet |
- | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 300 V | 4A (Tc) | 5V | 404mOhm @ 4A, 5V | 2.8V @ 600µA | 2.6 nC @ 5 V | +6V, -4V | 450 pF @ 150 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
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FBG20N18BSHGAN FET HEMT 200V 18A 4FSMD-B EPC Space, LLC |
47 | - |
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Datasheet |
e-GaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 18A (Tc) | 5V | 28mOhm @ 18A, 5V | 2.5V @ 3mA | 7 nC @ 5 V | +6V, -4V | 900 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
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FBG10N30BSHGAN FET HEMT 100V 30A 4FSMD-B EPC Space, LLC |
40 | - |
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Datasheet |
eGaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 30A (Tc) | 5V | 12mOhm @ 30A, 5V | 2.5V @ 5mA | 11 nC @ 5 V | +6V, -4V | 1000 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
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CDA04N30X1CGANFET 40V 30A .004 OHM 4DAPT EPC Space, LLC |
88 | - |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CDA10N30X1CGANFET 100V 30A .009 OHM 4DAPT EPC Space, LLC |
100 | - |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CDA10N05X2CGANFET 100V 5A .030 OHM 4DAPT EPC Space, LLC |
100 | - |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CDA20N18X3CGANFET 200V 18A .025 OHM 4DAPT EPC Space, LLC |
64 | - |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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EPC7004BCGAN FET HEMT100V30A COTS 4FSMD-B EPC Space, LLC |
41 | - |
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Datasheet |
- | 4-SMD, No Lead | Tray | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 30A (Tc) | 5V | 13mOhm @ 30A, 5V | 2.5V @ 7mA | 7 nC @ 5 V | +6V, -4V | 797 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
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