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+8618924632110（Bella)
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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSC045SMB120D/SMOSFET SIC 1200 V 45 MOHM DIE |
0 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC025SMA330B4NMOSFET SIC 3300V 25 MOHM TO-247- |
0 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 104A | - | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
MSC025SMA120SCT/RMOSFET SIC 1200 V 25 MOHM PSMT |
0 |
|
Datasheet |
mSiC™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 108A (Tc) | 18V, 20V | 31mOhm @ 40A, 20V | 3V @ 3mA | 232 nC @ 20 V | +23V, -10V | 3633 pF @ 1000 V | - | 524W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268 |
|
|
MSC030SMB120D/SMOSFET SIC 1200 V 30 MOHM DIE |
0 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC400SMA330B4NMOSFET SIC 3300V 400 MOHM TO-247 |
0 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 11A (Tc) | 20V | 520mOhm @ 5A, 20V | 2.97V @ 1mA | 37 nC @ 20 V | +23V, -10V | 579 pF @ 2.4 kV | - | 131W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
MSC011SMC120D/SMOSFET SIC 1200 V 11 MOHM DIE |
0 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC011SMB120SDT/RMOSFET SIC 1200 V 11 MOHM, 7LD T |
0 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC080SMB120D/SMOSFET SIC 1200 V 80 MOHM DIE |
0 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC040SMA120SDT/RMOSFET SIC 1200 V 40 MOHM TO-263 |
0 |
|
Datasheet |
mSiC™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 18V, 20V | 50mOhm @ 40A, 20V | 2.7V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1962 pF @ 1000 V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268 |
|
|
MSC011SMB120D/SMOSFET SIC 1200 V 11 MOHM DIE |
0 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC060SMB120D/SMOSFET SIC 1200 V 60 MOHM DIE |
0 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC040SMB120D/SMOSFET SIC 1200 V 40 MOHM DIE |
0 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC025SMB120D/SMOSFET SIC 1200 V 25 MOHM DIE |
0 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC080SMA330B4NMOSFET SIC 3300V 80 MOHM TO-247- |
0 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 41A (Tc) | 20V | 105mOhm @ 30A, 20V | 2.97V @ 3mA | 55 nC @ 20 V | +23V, -10V | 3462 pF @ 2.4 kV | - | 381W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
IGLT65R055D2GAN TRANSISTOR 650 V G5 |
0 |
|
- |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | 6.6 nC @ 3 V | -10V | 330 pF @ 400 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
|
|
IGLT65R045D2GAN TRANSISTOR 650 V G5 |
0 |
|
- |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 38A (Tc) | - | - | 1.6V @ 3.3mA | 8.4 nC @ 3 V | -10V | 420 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
|
|
SCT2H12NWBTL1SICFET N-CH 1700V 4A TO268 |
0 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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SCT2750NWCTL1SICFET N-CH 1700V 5.9A TO268 |
0 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
C3M00160120DSIC, MOSFET, 120M, 650V, TOLL, I |
0 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
C3M0900170DSICFET N-CH 1700V 4.9A TO247-3 |
0 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 6.3A | - | - | - | - | - | - | - | - | 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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