Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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NVVR21A65M2WSBSILICON CARBINE (SIC) MODULE - E onsemi |
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- | 15-PowerDIP Module (2.441", 62.00mm) | Bulk | Discontinued at Digi-Key | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Through Hole | AHPM15-CDE |
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FDC6327C-F169DUAL N & P-CHANNEL POWERTRENCH M onsemi |
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PowerTrench® | SOT-23-6 Thin, TSOT-23-6 | Bulk | Discontinued at Digi-Key | MOSFET (Metal Oxide) | N and P-Channel | - | 20V | 2.7A (Ta), 1.9A (Ta) | 80mOhm @ 2.7A, 4.5V, 170mOhm @ 1.6A, 4.5V | 1.5V @ 250µA | 4.5nC @ 4.5V, 4nC @ 4.5V | 315pF @ 10V, 325pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TSOT-23-6 |